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4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens

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4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens

Name: 4HN Semi Transparent Sapphire Substrate SiC Crystal Ingot Optical Widows Lens
Brand: ZMKJ
Price: 1 USD

Wholesale 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from china suppliers

Brand Name : ZMKJ

Model Number : sic optical lens

Place of Origin : CHINA

MOQ : 1pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-50pcs/month

Delivery Time : 2-4weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4H-N type

Grade : optical lens

Thicnkss : 6-15mm

Suraface : polished

Application : optical window lens

Diameter : customzied

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3inch/4inch/2inch 4H-N/semi transparent SiC crystal ingot for optical widows lens after polished

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

Applications

III-V Nitride Deposition Optoelectronic Devices

High-Power Devices High-Temperature Devices High-Frequency Power Devices

1. Description

SILICON CARBIDE MATERIAL PROPERTIES

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

2 -6inch diameter Silicon Carbide (SiC) ingot specification1

Grade		Production Grade	Research Grade	Dummy Grade
Diameter		50.8/76.2/100/150mm±0.38mm
Thickness		6-15mm
Wafer Orientation		On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward  1120  ±0.5° for 4H-N/4H-SI
Micropipe Density		≤5 cm-2	≤15 cm-2	≤50 cm-2
Resistivity	4H-N	0.015~0.028 Ω·cm
	6H-N	0.02~0.1 Ω·cm
	4/6H-SI	>1E5 Ω·cm		(90%) >1E5 Ω·cm
Primary Flat		{10-10}±5.0°
Primary Flat Length		15.9 mm±1.7 mm
Secondary Flat Length		8.0 mm±1.7 mm
S

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

About ZMKJ Company

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

Our Relation Products

Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball/ Gap wafers

FAQ:

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

Q: What's the way of shipping and cost and pay term ?

A:(1) We accept 100％ T/T In advance by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 10pcs up.

Product Tags:

silicon carbide substrate

sic wafer

4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens Images

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