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8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate

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8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate

Name: 8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate
Brand: ZMKJ
Price: 1 USD

Wholesale 8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate from china suppliers

Brand Name : ZMKJ

Model Number : 4H-N

Place of Origin : CHINA

MOQ : 1pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-50pcs/month

Delivery Time : 1-6weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4H-N type

Grade : Dummy/Research/Production

Thicnkss : 0.5MM/10-15mm

Suraface : polished

Application : bearing test

Diameter : 8inch

color : Green

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Double Side Polish Silicon Carbide Wafer 2-8'' 4H N - Doped SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

Description of SIC Wafer

4 inch Conductive SiC Wafer Specification
Product	4H-SiC
Grade	Grade I	Grade II	Grade III
polycrystalline areas	None permitted	None permitted	<5%
polytype areas	None permitted	≤20%	20% ~ 50%
Micropipe Density)	< 5micropipes/cm-2	< 30micropipes/cm-2	<100micropipes/cm-2
Total usable area	>95%	>80%	N/A
Diameter	100.0 mm +0/-0.5 mm
Thickness	500 μm ± 25 μm or Customer Specification
Dopant	n type: nitrogen
Primary Flat Orientation)	Perpendicular to <11-20> ± 5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Orientation)	90° CW from Primary flat ± 5.0°
Secondary Flat Length)	18.0 mm ± 2.0 mm
On axis Wafer Orientation)	{0001} ± 0.25°
Off axis Wafer Orientation	4.0° toward <11-20> ± 0.5° or Customer Specification
TTV/BOW/Warp	< 5μm / <10μm /< 20μm
Resistivity	0.01~0.03 Ω×cm
Surface Finish	C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification			Double side polish

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots 8 inch 4H N-Type	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer 8 inch 4H Semi-insulating SiC wafer

SiC Applications

Application areas

1:High frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET

2:Optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T 100% deposit before delivery.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

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